nec' s 7.5 v uhf band rf power silicon ld-mos fet features ? high output power: p out = 40.0 dbm typ., f = 900 mhz, v ds = 7.5 v, p out = 40.5 dbm typ., f = 460 mhz, v ds = 7.5 v, ? high power added efficiency: add = 48% typ., f = 900 mhz, v ds = 7.5 v, add = 50% typ., f = 460 mhz, v ds = 7.5 v, ? high linear gain: g l = 15.0 db typ., f = 900 mhz, v ds = 7.5 v, g l = 18.5 db typ., f = 460 mhz, v ds = 7.5 v, ? surface mount package: 5.7 x 5.7 x 1.1 mm max ? single supply: v ds = 2.8 to 8.0 v ne5511279a description nec's ne5511279a is an n-channel silicon power laterally diffused mosfet specially designed as the transmission power ampli?er for 7.5 v radio systems. die are manu - factured using nec's newmos1 technology and housed in a surface mount package. this device can deliver 40.0 dbm output power with 48% power added ef?ciency at 900 mhz using a 7.5 v supply voltage. ? uhf radio systems ? cellular repeaters ? two-way radios ? frs/gmrs ? fixed wireless applications california eastern laboratories symbol parameter min typ max unit test conditions p out output power 38.5 40.0 ? dbm f = 900 mhz, v ds = 7.5 v, i d drain current ? 2.5 ? a p in = 27 dbm, add power added ef?ciency 42 48 ? % i dsq = 400 ma (rf off) g l linear gain ? 15.0 ? db p in = 5 dbm p out output power ? 40.5 ? dbm f = 460 mhz, v ds = 7.5 v, i d drain current ? 2.75 ? a p in = 25 dbm, add power added ef?ciency ? 50 ? % i dsq = 400 ma (rf off) g l linear gain ? 18.5 ? db p in = 5 dbm i gss gate to source leak current ? ? 100 na v gs = 6.0 v i dss drain to source leakage current (zero gate voltage drain current) ? ? 100 na v ds = 8.5 v v th gate threshold voltage 1.0 1.5 2.0 v v ds = 4.8 v, i ds = 1.5 ma r th thermal resistance ? 5 ? c/w channel to case g m transconductance ? 2.3 ? s v ds = 3.5 v, i ds = 900 ma bv dss drain to source breakdown voltage 20 24 ? v i dss = 15 a electrical characteristics (t a = 25c) notes: dc performance is 100% tested. rf performance is tested on several samples per wafer. wafer rejection criteria for standard devices is 1 reject for several samples. outline dimensions (units in mm) package outline 79a 0.90.2 0.20.1 (bottom view) 3.60.2 1.50.2 1.2 max. 0.8 max. 1.0 max. source gate drain 0.40.15 5.7 max. 5.7 max. 0.60.15 0.80.15 4.4 max. 4.2 max. source gate drain w 3 2 1 0 0 1
absolute maximum ratings 1 (t a = 25 c) symbols parameters units ratings v ds drain supply voltage 2 v 20.0 v gs gate supply voltage v 6.0 i d drain current a 3.0 p tot total power dissipation w 20 t ch channel temperature c 125 t stg storage temperature c -55 to +125 note: 1. operation in excess of any one of these parameters may result in permanent damage. 2. v ds must be used under 12 v on rf operation. ne5511279a part number qty ne5511279a-t1-a ? 12 mm wide embossed taping. ? gate pin faces the perforation side of the tape. ? 1 kpcs/reel NE5511279A-T1A-A ordering information recommended operating limits symbols parameters units typ max v ds drain to source voltage v 7.5 8.0 v gs gate supply voltage v 2.0 3.0 i ds drain current 1 a 2.5 3.0 p in input power dbm 27 30 f = 900 mhz, v ds = 7.5 v 4.0 1.7 6.1 0.5 0.5 source gate drain 5.9 1.0 1.2 0.5 through hole 0.2 33 p.c.b. layout (units in mm) 79a package note: use rosin or other material to prevent solder from penetrating through-holes. f = 900 mhz 5 4 3 2 1 0 45 40 35 30 25 20 10 15 20 25 30 35 p out i ds add d 100 75 50 25 0 typical performance curves (t a = 25c) output power, p out (dbm) output power, drain current, d , add vs. input power input power,p in (dbm) drain ef?ciency, d (%) power added ef?ciency, add (%) f = 460 mhz 5 4 3 2 1 0 45 40 35 30 25 20 10 15 20 25 30 35 p out i ds add d 100 75 50 25 0 output power, p out (dbm) output power, drain current, d , add vs. input power input power,p in (dbm) drain ef?ciency, d (%) power added ef?ciency, add (%) drain to source current, i ds (a) drain to source current, i ds (a)
recommended soldering conditions this product should be soldered and mounted under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nearby sales of?ce. ne5511279a soldering method soldering conditions condition symbol infrared re?ow peak temperature (package surface temperature) : 260 c or below time at peak temperature : 10 seconds or less time at temperature of 220 c or higher : 60 seconds or less preheating time at 120 to 180 c : 120 30 seconds maximum number of re?ow processes : 3 times maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below ir260 vps peak temperature (package surface temperature) : 215 c or below time at temperature of 200 c or higher : 25 to 40 seconds preheating time at 120 to 150 c : 30 to 60 seconds maximum number of re?ow processes : 3 times maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below vp215 wave soldering peak temperature (molten solder temperature) : 260 c or below time at peak temperature : 10 seconds or less preheating temperature (package surface temperature) : 120 c or below maximum number of ?ow processes : 1 time maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below ws260 partial heating peak temperature (pin temperature) : 350 c or below soldering time (per pin of device) : 3 seconds or less maximum chlorine content of rosin ?ux (% mass) : 0.2%(wt.) or below hs350-p3 caution do not use different soldering methods together (except for partial heating). life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury. the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec co m p ound semiconductor devices, ltd . 08/26/2003
4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408 ) 9 19-250 0 facsimile : ( 40 8 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substance s i n electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information . restricted substanc e per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -a z lead (p b) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmiu m < 100 ppm not detected hexavalent chromiu m < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: informatio n p rovided by ce l o n its website or in other communications concertin g the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its know ledge and belief on informatio n provided by thir d p arties and makes no representation or warrant y as to the accura cy of such information. efforts are underw ay to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but ma y not have conducted destructive testing or chemical analysis on incoming ma terials and chemicals. cel and ce l suppliers consider certain information to be propri etar y, and thus cas numbers and other limited information may not be availabl e for release . in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of wa rranties and liabilit y.
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